MRF6V10010NR4
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
50
0.1
100
02010
30
40
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
0.1
10
1
TC
=25°C
10
1
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
I
D
, DRAIN CURRENT (AMPS)
10
1
Coss
Crss
Measured with
±30 mV(rms)ac @ 1 MHz
VGS
=0Vdc
TJ
= 200°C
TJ
= 150°C
TJ
= 175°C
27
5
50
6
26
25
75
65
60
55
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
ηD
22
789101112
Gps
35
45
12
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
40
13 14 15 16 17 1918
P
out
, OUTPUT POWER (dBm) PULSED
P3dB = 40.66 dBm (11.65 W)
Actual
Ideal
Figure 7. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
, POWER GAIN (dB)
VDD
=30V
17
27
0
25
35 V
23
45 V
21246810
0
0.01
0.02 0.03 0.04 0.05 0.06 0.07
50 V
24
21
19
VDD
=50Vdc,IDQ
= 10 mA, f = 1090 MHz
Pulse Width = 100
μsec, Duty Cycle = 20%
IDQ
= 10 mA, f = 1090 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
40 V
VDD
=50Vdc,IDQ
= 10 mA, f = 1090 MHz
Pulse Width = 100
μsec, Duty Cycle = 20%
100
23
70
P1dB = 40.18 dBm
(10.42 W)
0
14
25_C
85_C
10
8
Pin, INPUT POWER (WATTS) PULSED
Figure 8. Pulsed Output Power versus
Input Power
P
out
, OUTPUT POWER (WATTS) PULSED
12
TC
=--30_C
6
4
2
VDD
=50Vdc
IDQ
=10mA
f = 1090 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF6V10250HSR5
MOSFET RF N-CH NI780S
MRF6V12500HR5
FET RF N-CH 1.03GHZ 100V NI-780H
MRF6V14300HSR5
MOSFET RF N-CH 50V NI780S
MRF6V2010GNR5
MOSFET RF N-CH 10W TO-270-2
MRF6V2150NBR5
MOSFET RF N-CH 50V TO272-4
MRF6V2300NR5
MOSFET RF N-CH 300W TO-270-4
MRF6V3090NR5
FET RF N-CH 860MHZ 50V TO270-4
MRF6V4300NR5
MOSFET RF N-CH 300W TO-270-4
相关代理商/技术参数
MRF6V10010NR4-CUT TAPE
制造商:Freescale 功能描述:MRF6V10010N Series 1090 MHz 10 W 50 V Pulsed Lateral N-Channel RF Power MOSFET
MRF6V10010NT1
制造商:Freescale Semiconductor 功能描述:VHV6 10W PULSE PLD1.5 - Tape and Reel
MRF6V10250HSR3
功能描述:射频MOSFET电源晶体管 VHV6 250W AVIONIC NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V10250HSR5
功能描述:射频MOSFET电源晶体管 VHV6 250W AVIONIC NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V12250HR3
功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V12250HR5
功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V12250HSR3
功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V12250HSR5
功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray